Part No. IR2110
Introduction:
The IR2110 are superior voltage, great speed power MOSFET and IGBT drivers with impartial high and low side referenced output feeds. Trademarked HVIC and latch protected CMOS technologies enable ruggedized monolithic construction. Logic inputs are similar with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers highlight a high pulse current buffer stage intended for minimum driver cross-conduction. Dissemination delays are matched to streamline use in high frequency applications.
Features:
- Gate drive supply range varies from 11 to 21V
- Lockout of undervoltage for both channels
- 3V logic harmonizing Separate logic supply range from 3.3V to 20V Logic as well as power ground ±5V offset
- CMOS Schmitt-triggered inputs along with pull-down
- Cycle by cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
Working:
IR2110 is a high voltage MOSFET driver IC. It can propel both low side and high side switches in half-bridge and low bridge circuits. Why we need a MOSFET driver? Because MOSFETs are voltage control gadgets and used to drive MOSFET the gate capacitance should be accused to operating voltage which is typically between 9-10 volt. One can do it very simply but there is one issue. High voltage on the drain of MOSFET cause trouble by interaction with gate-drain capacitance The moving channel can be used to drive an N-channel power MOSFET or IGBT in the high side structure which operates up to 500 or 600 volts.
Applications:
- Motor driver DC
- Speed control of AC motor
- Full, half and three phase bridges
- Pulse inverter sine wave
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