Part Number: 2N3055

Designed for general-purpose applications, the 2N3055 is an NPN power transistor made using the epitaxial base method and housed in a hermetically sealed metal container. The device is intended for use in switching and amplifier applications that are broad in nature. The 2N3055 is also utilized in audio power amplifiers, as previously stated. A high amplification factor and nearly linear gain make the 2N3055 one of the most effective solutions for power amplifiers on the market.

2N3055 Pin Configuration

The pins of the 2N3055 transistor, like any other transistor, are EMITTER, BASE, and COLLECTOR. The pin layout of the 2N3055 is:
2N3055 Features and Specifications
Moderately strong transistor
Durable and trustworthy operation range
Two-terminal NPN-PNP bipolar junction transistors
Collector-emitter saturation voltage that is too low
Lead-free packaging is offered.
hFE in DC up to 70
When it comes to linearity, hfe has been enhanced.
Collector and emitter maximum voltage: 60 V DC
The maximum current permitted to flow through the collector: 15A DC.
Base and emitter maximum voltage: 7V DC
The base current limit is 7A DC.
Collector-base voltage: 100V DC
Range of operation: -65°C to +200°C
Total power dissipation: 115 watts

Application

The 2N3055 has various industrial applications such as inverters and power conversion circuits in a wide range of applications, including motor drivers, plasma display panels, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes, and other similar devices.:

PS: Find PMIC – Voltage Regulators – Special Purpose,Specialized ICs on Utsource