Metal-Oxide-SemIConductor (Metal-Oxide-SemIConductor) transistors are referred to as MOS transistors, which are divided into P-type MOS transistors and N-type MOS transistors. The integrated circuit composed of MOS tube is called MOS integrated circuit, and the complementary MOS integrated circuit composed of PMOS tube and NMOS tube is CMOS-IC
MOSFET structure
MOSFET is the English abbreviation of Metal-Oxide-SILICon Field Effect Transistor. It has a planar device structure and can be divided into NMOS and PMOS devices according to the different conductive channels. MOS devices are based on the principle of surface induction, which uses vertical gate voltage VGS to control the horizontal IDS. It is a multi-child (majority carrier) device. Use transconductance to describe its amplification capability.
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