Title: Part No. RJP30H1
Introduction:
N channel IGBT is the short form of Insulated Gate Bipolar Transistor used for various purpose in different circuits. It is a three-terminal semiconductor switching device that can be used for fast switching and for traction control with high efficiency in many types of electronic devices. These devices are mostly used in amplifiers for switching/processing and complex wave patters with pulse width modulation (PWM) scheme.
Features:
Trench gate and also thin wafer technology
High speed switching is there: tr = 80 ns typ., tf = 150 ns typ.
Low collector to emitter saturation voltage is also present: VCE (sat) = 1.5 V typ.
Low leakage current: ICES = 1 A max.
Applications:
Motor drives both AC & DC
Uninterruptable power supplies
In induction Heating
Control of traction motors
PS: Find Interface – Analog Switches – Special Purpose,Interface – Analog Switches, Multiplexers, Demultiplexers on Utsource
