Part Number: BF981
N-CHANNEL DUAL GATE MOS-FET WHICH FUNCTIONS IN SILICON
Packge Number: SOT-103 Manufactured by: Philips Semiconductors
INTRODUCTION AND APPLICATIONS OF BF981
The BF981 is an N-type depletion metal–oxide–semiconductor field-effect transistor (MOS-FET) It is intended for v.h.f. applications such as television tuners, FM radio tuners, and professional communication equipment. It is packaged in a plastic X-package with the source and substrate interconnected and is of the depletion type. The integrated back-to-back diodes between the gates and the source of this MOSFET tetrode provide protection against excessive input voltage surges in this device.
Features of BF981
Data for Quick Reference
1. Drain-source voltage (Vds) is a maximum of 20 volts.
2. Drain current (ID): Id = maximum of 20mA
Up to Tamb = 75°C, total power dissipation is 225mW at maximum temperature.
RATINGS OF BF981
Using the Absolute Maximum System, we may set limits on values (l EC 134)
Drain-source voltage maximum of 20 V
dc or ID) is limited to a maximum of twenty.
Max. drain current (maximum peak value) 30 Gate I – source current (IGI-S) with a maximum of 10 mA.
Gate 2 • source current (I G2-S) is limited to a maximum of 10 mA.
225 mW is the maximum power dissipation up to (Tamb= 75) ptot max.
T Stg (Storage temperature) —(65 to + 150 degrees Celsius Junction temperature)
PS: Find Darlington Transistors,RF Modules on Utsource
