Magnetron Sputtering Power Supply utilizes multiple power sources, including DC, RF, Pulsed DC, AC, and HIPIMS. but, Below is a brief description of the differences between these power types.

Direct Current Sputtering Power

DC is generally use for electrically conductive target materials. It is convenient to control, easy to use, and low cost.

Radio Frequency Sputtering Power

RF Power applies to all materials but is generally most useful when depositing thin films on polymeric targets. Due to the mobility difference between electrons and ions in a plasma, the electron flux (driven by the relative duty cycle) is substantially higher on the substrate when compared to DC.

DC Pulsed Sputtering Power

DC pulses (variable frequency) have been widely use in reactive Magnetron Sputtering Power Supply. A positive voltage spike generated at a particular frequency can be use to clean the face of the target and remove a thick dielectric layer that causes arcing. so, Typically, the frequency range is 40 to 200 kHz.

Mid Frequency AC Sputtering Power

MF Sputtering is commonly use to deposit non-conductive materials. Dual cathodes with AC are use, and the target surface is cleaned by switching between cathodes with each cycle.


Magnetron sputtering with high-power pulses is a new process that greatly increases the ionization of the sputtering material using high current pulses. but, For instance, ionized atoms in magnetron sputtering have much higher energy than sputtered atoms and have proven to form very stable and dense films.

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Keywords: Static Var Generator | Active Power Filter | Transformer | Pad Mounted Transformer | Oil Filled Transformer

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