Title: Part No. BSM20GP60
Introduction:
The Insulated Gate Bipolar Transistor also called IGBT for short, is a cross between the standard Bipolar Junction Transistor, (BJT) and the Field Effect Transistor, (MOSFET) which makes it as good as a flexible semiconductor device. It is mostly used in amplifiers for switching complex wave patterns and PWM. The IGBT Transistor captures the best parts of these two types of standard transistors, high input distortion and high MOSFET switching speed with low saturation voltage of bipolar transistor and combine to form new form of transistor.
Core Parameters:
Metal base plate insulated in nature
Free wheel diode
Power module
Full bridge 3 phase
Working:
Basically, this module is an insulated gate bipolar transistor used for high switching. IGBT combines with the low value of saturation voltage of transistor with high speed and high impedance of MOSFET. The IGBT merges, in a single device, a self-control input with a MOS composition and a bipolar power transistor that acts as an output switch. When both these combined with each other they generated a high switching and provide a transference current to bi-polar transistor and voltage is controlled by MOSFET. Initially, believe that there is no voltage applied to the Gate terminal, at that time the IGBT will be in a non-conductive state.
Applications:
For Fast Switching Devices
Things which involve electrical control
Motor Control Applications
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