Part Number : RJP63F3
Function : (630V), Silicon N Channel IGBT
Package : (TO-220FL) Type
Manufactured by : Renesas Electronics
Description
The RJP63F3 electronic module is quickly replacing power bipolar transistors in the industry, the module is able to do this because of its high current and high voltage applications.
The RJP63F3 is an IGBT device which had the ADVANTAGES of both p-channel metal-oxide field-effect transistor (PMOSFETs) and Power bipolar junction transistor (BJT) In fact, the industry trend NOW is for insulated gate bipolar transistors (IGBTs) to replace power metal-oxide field-effect transistor (MOSFETs) except for in very low current applications.
● Thin wafer technology paired with a trench gate (G6H series)
● V is the typical collector-emitter saturation voltage, VCE(sat).
● The HSS (tf) with a switching time of 100 ns =
● 1 μA max lowest leak current (ICES)
● Complete bundle (TO-220FL)
Applications
High Speed Power Switching tech.
Absolute Maximum Ratings (Ta = 25°C)
1. Rated Collector to emitter voltage (EM) – VCES = 630 V
2. Rated Gate to emitter voltage (EM) – VGES = ±30 V
3. Rated Collector current – IC = (40 A)
4. Rated Collector peak current – ic(peak) = –( 200 A)
5. Rated Collector dissipation – PC = (30 W)
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