PART NUMBER: RJP63K2
The RJP63K2 is an N-channel insulated-gate bipolar transistor (IGBT) that is basically an N-channel power metal–oxide–semiconductor field-effect transistor (MOSFET) constructed on a p-type substrate, as shown on the generic insulated-gate bipolar transistor (IGBT) cross section in the Figure below.
The RJP63K2 (Silicon N) Channel IGBT High Speed Power Switching is the major function of this device. Its Package consists of 3 pin (TO-220FL) Manufacturers of the RJP63K2 IGBT Transistor:
Features of the RJP63K2 IGBT Transistor
●The RJP63K2 has a Thin-wafer technology as well as (G6H-II series)
●The RJP63K2 has a Collector to (emitter saturation voltage) is low: VCE(sat) = 1.9 V on average.
●The RJP63K2 has a high-speed switching (HSS): tr= (often 60 ns), tf= (200 ns typ)
●The RJP63K2 has a Low leak current: ICES=Ice Current Efficiency Standard (1 uA max)
●The RJP63K2 VCES is the voltage between the collector and the emitter (630 V)
●VGES = (30 V) is the voltage between the gate and the emitter.
●Collector current: IC = collector current (35 A)
●Collector maximum current: ic(max) = ic(max) (200 A)Collector dissipation (PC) is equal to (25 W)
Application
●The RJP63K2 is used for various high voltage applications like variable speed control, PWM, and SMPS.
●The RJP63K2 can be used as an AC to DC converter powered by solar and frequency converter applications which operates within a hundred frequency range
●The RJP63K2 can be used for fast switching control
PS: Find Data Acquisition – ADCs/DACs – Special Purpose,Data Acquisition – Analog Front End (AFE) on Utsource
