Part Number: 45G128
Description
TOSHIBA has begun mass manufacturing of the 45G128 electronic component, which is a part of the Transistors family. Each device is offered in a tiny TO-220F package and is specified to operate across a wide temperature range of -40°C to 105°C, depending on the configuration (TA).
An insulated-gate bipolar transistor is a three-terminal power semiconductor device that is primarily used as an electronic switch. As the device evolved, it was able to combine high efficiency with fast switching, resulting in the term “insulated-gate bipolar transistor.” There are four alternating layers in it, and the gate structure is made up of a metal–oxide–semiconductor configuration.
There are several voltage and current ratings available for the Toshiba discrete IGBTs, including high voltage and high current. The devices are utilized as inverters and power conversion circuits in a wide range of applications, including motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes, and other similar devices.
Features
(1) IGBTs are also characterized by their rapid switching.
(2) Even in the high current area, the collector-emitter saturation voltage remains low.
(3) Inductively coupled bipolar transistors (IGBTs) with a built-in diode with excellent properties customized to certain applications
(4) A high input impedance enables voltage drivers to be used.
(5) A range of packaging options are available.
Applications
Plasma display panels are a type of flat-panel display that uses a plasma source to display images.
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