Part Number : RJP63F3A
Function : 630V 40A N-ch IGBT
Package : TO-220FL Type
Description
The RJP63F3A is an N-channel insulated-gate bipolar transistor (IGBT) that is basically an N-channel power metal–oxide–semiconductor field-effect transistor (MOSFET) constructed on a p-type substrate, as shown on the generic insulated-gate bipolar transistor (IGBT) cross section in the Figure below.The RJP63F3A electronic module is quickly replacing power bipolar transistors in the industry, the module is able to do this because of its high current and high voltage applications. The RJP63F3A is an IGBT device which had the ADVANTAGES of both p-channel metal-oxide field-effect transistor (PMOSFETs) and Power bipolar junction transistor (BJT) In fact, the industry trend NOW is for insulated gate bipolar transistors (IGBTs) to replace power metal-oxide field-effect transistor (MOSFETs) except for in very low current applications.
Features
• The RJP63F3A has a Trench gate and thin wafer technology (G6H series)
• The RJP63F3A has a Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ
• The RJP63F3A has a very high speed switching equivalent = 100 ns typ
• The RJP63F3A has a Low leak current ICES= 1 μA max
Application
• The RJP63F3A is used for various high voltage applications like variable speed control, PWM, and SMPS.
• The RJP63F3A can be used as an AC to DC converter powered by solar and frequency converter applications which operates within a hundred frequency range
• The RJP63F3A can be used for fast switching control
PS: Find Data Acquisition – Analog to Digital Converters (ADC),Data Acquisition – Digital Potentiometers on Utsource
