Part Number : 30F131, GT30F131
Function : Discrete IGBT (360V), (200A)
Package : TO-220SM(MXN)
Manufactured by : Toshiba
The Toshiba 30F131 Discrete IGBTs have several unique characteristics. What makes it standout is that it combines the MOSFET advantage of high input impedance together with the bipolar transistor advantage of high-voltage drive, making the 30F131 an industry standard.
Construction
The planar IGBT has a basic structure consisting of four layers (pnpn), as illustrated in the following image. The use of a pnp transistor, which allows conductivity modulation during conduction, allows for a low saturation voltage to be obtained.
Features
(1) IGBTs are also characterized by their rapid switching.
(2) Even in the high current area, the collector-emitter saturation voltage remains low.
(3) Inductively coupled bipolar transistors (IGBTs) with a built-in diode with excellent properties customized to certain applications
(4) A high input impedance enables voltage drivers to be used.
(5) A range of packaging options are available.
Application
The 30F131 have several voltage and current ratings available, including high voltage and high current. The 30F131 has various industrial applications such as inverters and power conversion circuits in a wide range of applications, including motor drivers, plasma display panels, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes, and other similar devices.
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